【摘要】 首次对双向负阻晶体管 (BNRT)进行了光敏化 ,设计并研制出既有光敏特性又有“S”型负阻特性的一种新型光电开关器件———光电双向负阻晶体管 (PBNRT)。介绍了器件的设计和研制过程 ;测量分析了其I V特性与光强和栅极电压的关系 ;测量了光电开关的时间常数并进行了分析讨论更多还原

【Abstract】 By means of photo sensitization a photo bidirectional negative resistance transistor (PBNRT) have been designed and fabricated for the first time.This new optical switching device has both light sensitive and"S"type negative resistance characteristics.In this paper,the relationship between light intensity and gate voltage affecting I V characteristics is measured and analyzed,together with the optical and electrical switching time.更多还原