【摘要】 InGaAsP/InP双异质结构外延片在直流负偏压 12 0V作用下 ,利用射频溅射和光刻剥离技术在样品表面淀积厚为 110nm的W0 .95Ni0 .0 5金属薄膜应变条 ,并在该应变条下的半导体内形成了对InGaAsP/InP双异质结构侧向光具有良好限制作用的光弹波导结构。W0 .95Ni0 .0 5金属薄膜及由其形成的光弹波导器件在氢氮混合气体的保护下 ,分别在 2 50℃、350℃、4 50℃和 60 0℃温度下各退火 30min以后 ,W0 .95Ni0 .0 5金属薄膜中压应变减少了十分之一。光弹波导器件输出椭圆形近场光模长、短轴之比由原来的 2 .0增加到 2 .2 (对 2 μm条宽 )和 2 .5增加到 2 .9(对 4 μm条宽 )。实验结果证明 ,这种波导结构具有很高的热稳定性。更多还原

【Abstract】 Deposition of 110 nm-thick W 0.95 Ni 0.05 metal thin film stripes on InGaAsP/InP heterostructure wafer is carried out using both RF sputtering with the substrate under a negative DC bias of 120 V and a photoresist lift-off technique. The photoelastic waveguides, which achieve the lateral confinement of light in InGaAsP/InP heterostructures, are formed in semiconductor beneath the stripes of W 0.95 Ni 0.05 thin film. The compression strain in the metal thin film is reduced by a factor of about 10%, and ratio of ellipse axises for near-field optical patterns increases from 2.0 to 2.2 for the 2 μm-wide stressor, and from 2.5 to 2.9 for 4 μm-wide stressor after W 0.95 Ni 0.05 metal thin film and photoelastic waveguide devices are annealed at 250 ℃, 350 ℃, 450 ℃ and 600 ℃ for 30 minutes in forming gas. These experimental results have well confirmed high thermal stability of the waveguide structures.更多还原