节点文献
ULSI制备中氧化硅介质化学机械抛光的研究
CMP Study on Silica Dielectric in ULSI Manufacturing
【摘要】 对超大规模集成电路制备中二氧化硅介质的抛光机理、工艺条件的选择进行了大量理论和实验研究 ,着重研究了使用化学方法提高抛光速率、改善表面状况以及如何解决抛光浆料的沉积等问题 ,并实现了技术突破。
【Abstract】 The mechanism and the choice of processing conditions of silica dielectric in ULSI manufacturing were studied.The way of increasing the polishing rate and improving the surface condition by using chemical method was suggested.The question of deposition of slurry was resolved and the technological breakthrough was made.
【关键词】 化学机械抛光;
全局平面化;
多层布线;
ULSI;
二氧化硅;
【Key words】 CMP; Global planarization; Multilayer interconnection; ULSI; Silica dielectric;
【Key words】 CMP; Global planarization; Multilayer interconnection; ULSI; Silica dielectric;
- 【文献出处】 稀有金属 ,Chinese Journal of Rare Metals , 编辑部邮箱 ,2000年06期
- 【分类号】TN305.2
- 【被引频次】5
- 【下载频次】203