【摘要】 采用LEC工艺 ,通过特殊的过滤措施 ,可以批量拉制重掺碲的GaSb单晶材料。计算结果表明 ,在该生长系统及工艺条件下 ,碲在GaSb中的有效分凝系数约为 0 38。GaSb单晶EPD测试表明 :EPD沿径向分布呈“W”型 ,数量约为 1× 1 0 3cm- 2 ;沿晶体生长方向 (1 0 0 )变化不大。更多还原

【Abstract】 Based on comparison of the single crystal growth from several Czochralski techniques,it showed that the most advantageous method for GaSb growth seems to be LEC pulling method.Highly Te doped GaSb single crystals can be prepared on small scale with good reproducibility by using special filtering technology.Using the Te concentrations calculated from the Hall measurement,the distribution coefficient of tellurium in GaSb was estimated to be about 0.38 under our growth conditions.The etch pit density (EPD) examination in <100> GaSb showed that the profile of EPD is of W shape in growth plane and the value of average EPD is about 1.0×10 -3 cm -2 along growth direction.更多还原