【摘要】 论述了具有立方织构的金属镍基底上 ,采用射频磁控溅射的方法制备CeO2 缓冲层。以Ar/H2 混合气体作为溅射气体 ,有效地抑制了NiO的形成 ,获得纯c轴取向的CeO2 薄膜。X射线 φ扫描、ω扫描和极图的测试分析表明 ,CeO2 薄膜在平面内和垂直于膜面方向晶粒都是有序排列的 ,具有良好的立方织构。更多还原

【Abstract】 The buffer layer CeO 2 film for YBCO tape deposited on the cube textured metallic nickle by using magnetron sputtering technique was reported. Ar and H 2 were used as sputtering gas while CeO 2 film was grown, which effectively inhibited the formation of NiO. X ray 2θ scan, φ scan and ω scan were used to measure the microstructure of the buffer layer. It was shown that CeO 2 film has good in plane and out of plane orientations, and demonstrates an excellent cube texture.更多还原