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溅射电压和铝掺杂对透明导电氧化锌薄膜性能的影响

Influence of Sputtering Voltage and Al Dopping on Electrical and Optical Characteristics of Transparent Conducting ZnO Thin Film

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【作者】 施昌勇沈克明

【Author】 Shi Changyong 1 and Sheng Keming 2 (1. Department of Basic Science, Beijing Institute of Clothing Technology, Beijing 100029, China; 2. Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China)

【机构】 北京服装学院基础部!北京100029中国科学院等离子体物理所!合肥230031

【摘要】 研究了用微波ECR等离子体反应溅射制备透明导电氧化锌薄膜工艺中靶压及铝的掺入对薄膜电阻率和透光率的影响 ,制得电阻率为 1 0 -5Ω·m数量级 ,可见光平均透光率大于 80 %的透明导电ZnO∶Al (AZO)膜。

【Abstract】 The influence of sputtering voltage and Al dopping on the electrical and optical characteristics of ZnO thin film prepared by electron cyclotron resonance (ECR) plasma sputtering method was studied. By controlling the sputtering voltage and dopping Al, the ZnO∶Al film was obtained, the resistivity of the ZnO∶Al film 10 -5 Ω·m and its average transmittance in the visible region is above 80%.

  • 【文献出处】 稀有金属 ,CHINESE JOURNAL OF RARE METALS , 编辑部邮箱 ,2000年02期
  • 【分类号】TM241
  • 【被引频次】50
  • 【下载频次】239
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