【摘要】 在磁控溅射器中用钛板作阴极 ,采用直流反应磁控溅射在玻璃基板上制备二氧化钛薄膜 ,溅射气体为氧、氩混合气体 ,O2 与Ar比例为 1∶2 ,溅射总气压范围为 0 5～ 6 65Pa ,溅射时基板温度范围为 1 0 0～ 40 0℃ ,薄膜厚度范围为 1 4 0～ 1 1 0 0nm。XRD结果显示薄膜具有纯锐钛矿结构或锐钛矿和金红石的混合结构。在高的基板温度和适宜的溅射总气压下制备的薄膜以及厚度较厚的薄膜在紫外光照射后 ,有较好的光催化性更多还原

【Abstract】 TiO 2 thin films were grown on glass substrate by DC reactive magnetron sputtering in a mixture of argon and oxygen with an O/Ar ratio of 1∶2.During the film growth the pressure varied from 0 5 to 6 65 Pa;the substrate temperatures ranging from 100 to 400 ℃ in the film growth and the film thickness was in the range of 140 to 1100 nm.The X ray diffraction analysis of the films shows that the films have an anatase crystal structure or a mixture of anatase and rutile.Films grown at higher substrate temperatures in an appropriate sputtering pressure and thicker films exhibit better photo induced catalystic characteristics after ultra violet radiation.更多还原