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平面光波导膜的ECR-PECVD制备及特性研究

Growth of SiO2 Films by ECR PECVD for Planar Optical Wave-guide and Its Properties

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【作者】 张劲松任兆杏梁荣庆隋毅峰刘卫

【Author】 Zhang Jinsong,Ren Zhaoxing,Liang Rongqing,Sui Yifeng,Liu Wei (Institute of Plasma Physics,Academia Sinica,Hefei,230031)

【机构】 中国科学院等离子体物理研究所!合肥230031

【摘要】 采用微波电子回旋共振等离子体增强化学气相沉积技术 ,在单晶硅衬底上制备了用于平面光波导的SiO2 薄膜 ,研究了沉积速率与工艺参数之间的关系 ,并对射频偏置对成膜特性的影响作了初步实验研究。通过X射线光电子能谱、傅立叶变换红外光谱、扫描电镜、原子力显微镜、以及扫描隧道显微镜三维形貌和椭偏仪等测量手段 ,分析了样品的薄膜结构和光学特性等。结果表明 ,在较低温度下沉积出均匀致密、性能优良的SiO2 薄膜。此外 ,还成功制备出掺Ge的SiO2 薄膜 ,并可以精确控制掺杂浓度 ,以适应不同光波导芯的要求

【Abstract】 SiO 2 films,which can be used in planar optical wave guide,were grown on Si substrates by electron cyclotron resonance plasma enhanced chemical vapor deposition.Various factors affecting SiO 2 deposition rate,such as microwave power,gas flow ratio of oxygen and silane,and substrate temperature were investigated to optimize the film growth conditions.The film growth,its microstructures and its optical properties were studied with X ray photo electron spectroscopy,Fourier transform infrared spectroscopy and scanning tunnel microscopy etc.Our results show that high quality,uniform,continuous SiO 2 films can be grown at low temperatures.In addition,Ge doped SiO 2 films were also grown and studied.

  • 【分类号】TN304.55
  • 【被引频次】4
  • 【下载频次】103
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