【摘要】 通过传统的光刻工艺和纳米引晶技术 ,在抛光的单晶Si衬底上形成带有超细金刚石纳米粉的引晶图案 ,并利用该图案与抛光Si处金刚石成核密度的巨大差异 ,实现金刚石薄膜的高选择比生长。该方法具有工艺简单、沉积效率高、选择比高、对底无任何损伤等优点。同时 ,这种方法很容易在不同衬底上实现金刚石薄膜的大面积选择性生长。更多还原

【Abstract】 A novel process has been proposed to selectively grow the polycrystalline diamond film by selectively seeding with the diamond powder of 5 nm average size. A high degree of selectivity is achieved in the process, which has an advantage over the conventional SAD method. The process requires only a few steps and avoids the surface defects in the routine process. Further, it is possible to realize the uniform fabrication on substrate of a large size and a different material, which is technically significant in microelectronics applications.更多还原