【摘要】 建立了功率MOS器件单粒子栅穿效应的等效电路模型和相应的模型参数提取方法 ,对VDMOS器件的单粒子栅穿效应的机理进行了模拟和分析 ,模拟结果与文献中的实验数据相符合 ,表明所建立的器件模型和模拟方法是可靠的更多还原

【Abstract】 A new model is established to make simulation for single event gate rupture of power MOSFETs in use of PSPICE circuit simulation software. The application results have a very good agreement with the corresponding data in published articles.更多还原