节点文献
金属诱导法低温多晶硅薄膜的制备与研究
Preparation and Characterization of p Si Films by Metal Induced Crystallization at Low Temperature
【摘要】 利用金属诱导晶化 (Metal Induced Crystallization,MIC)的方法研究了 a- Si/Ni的低温晶化 ,MIC的晶化温度降低到 440℃。采用 XRD、Raman、SEM和 XPS等手段研究了 Ni-MIC多晶硅薄膜的特性 ,分析了薄膜结构和组成 ,讨论了晶化过程的机理。
【Abstract】 Amorphous silicon (a Si) films is deposited by PECVD and is crystallized by metal induced crystallization (MIC) at various temperatures. The crystallization temperature is reduced to as low as 440℃. Ni MIC p Si thin films are characterized with XRD, Raman, SEM and XPS. The depth profiles of structure and chemical composing of the films are analyzed, and the crystallization mechanism is discussed.
【基金】 中国科学院“九五”重大资助项目! ( KY951 -A1 -50 2 ) ;吉林省“九五”科技攻关项目! ( 970 1 0 3-0 1 ) ;吉林省杰出青年基金
- 【文献出处】 液晶与显示 ,Chinese Journal of Liquid Crystals and Displays , 编辑部邮箱 ,2000年04期
- 【分类号】O484.4
- 【被引频次】8
- 【下载频次】136