【摘要】 利用蒸发和溅射工艺 ,研究了 Cd Se- TFT的制作 ,特别对掺 In的 Cd Se- TFT的电性能进行了研究。实验中观察到 Cd Se掺 In后 ,TFT的 I - V特性明显得到改善 ,得到了性能稳定的 TFT器件。利用半导体掺杂理论对此现象进行了解释。更多还原

【Abstract】 CdSe TFT was prepared with evaporation and sputtering processes. It was observed that the I-V characteristics of TFT were improved when In was doped into CdSe. The result was explained by the dopant theory of semiconductor.更多还原