【摘要】 用高分辨透射电镜等手段研究了溶胶 -凝胶 (Sol- Gel)工艺制备的硅基 Pb(Zr,Ti) O3 (PZT)铁电薄膜 ,发现在 PZT的上表面生成了 Si O2 ,PZT与硅衬底的界面处形成了无定型的 Si Ox 层并有铅的沉积 ,而且热处理温度越高 ,这种现象越显著。这些结构严重影响了 PZT铁电薄膜的品质及其应用。在分析上述结构产生机制的基础上提出了 Sol- Gel工艺的改进方法。更多还原

【Abstract】 Structures of the silicon-based Pb(Zr, Ti)O 3(PZT) thi n films were investigated by high resolu tion transmission electron microscopy (H RTEM) and other methods. A silicon dioxi de layer was found at the PZT surface. A n amorphous silicon oxide layer and lead deposition appeared at the PZT/Si inter face. These structures. which heavily af fected the properties and the applicatio ns of the PZT thin films, became more se rious as the annealing temperature incre ased. the idea to improve the Sol-Gel me thod was proposed based on the formation -mechanism analysis of the micro structu res.更多还原