【摘要】 依照缺陷势垒模型 ,将压敏电阻器视为双向导通的二极管 ,应用半导体理论对低电压情况下的电流 -电压关系数据进行了处理 ,得到了 Sn O2 - Zn O- Nb2 O5压敏材料的势垒电压。选取的 4个测量温度得到的结果是相同的 ,保证了实验结果的正确性。更多还原

【Abstract】 The semiconductor theory about the conduction of zener diode was applied to the SnO 2 ZnO 2 Nb 2O 5 varistor since it is analogous to two back to back diodes according to the defect barrier model.The current voltage characteristics were measured at the low voltage region.The values of the barrier voltage were determined by the interception of the I V plot.The measurement was carried out at different temperatures and identical results were obtained.更多还原