【摘要】 本文用室温固相反应法和真空蒸发法分别合成了黄铜矿型CuInSe-2多晶粉末和制备了富Cu的Cu-xIn-{l-x}Se-2薄膜用XRD，ICP HALL和UVVIS波段光透射技术分别测量了样品的原子结构，化学成分及光电性能发现在两元固相反应中，InSe反应很不完全而CuSe就不能反应，而三元固相反应的粉末样品中即使有些杂质，但黄铜矿型CuInSe-2的衍射峰非常突出，而且所得粉末样品都是富Cu的，说明在固相反应过程中In有损失化学配比固相反应合成的样品在基片温度较低时其真空蒸发薄膜是非晶，高温时则是择优取向非常明显的多晶样品的禁带宽度变化不大(1.47~{1.58}eV)不同配比样品在基片温度300℃时蒸发样品的禁带宽度变化很大(1.58~1.97eV)，而且电学数据变化也较大，霍尔迁移率从几十到几百cm+2/V.s，面载流子浓度从10+6到10+9/cm+2更多还原

【Abstract】 CuInSe-2 thin film was prepared by a process which includes two steps:(a)the formation of chalcoprite CuInSe-2 powder by solid-Rection,and (b) vacuum evaporation of the powder to form CuInSe-2 thin films on glass substrate.Xray diffraction (XRD),Hall system(Hall 5500PC) and optical transmission measurements were used to characterize the powder and thin film specimen.The analysis showed that the powder was Chalcoprite polycrystalline CuInSe-2 and some of In composition was lost.The structure,optical and electric peroprties of CuInSe-2 thin film were heavily effected by the substrate temperature and the ratio of Cu/In.更多还原