【摘要】 以n型 ( 10 0 )Si为衬底 ,用CH4 和H2 作反应气体 ,在 150℃的衬底温度下淀积了非晶碳平面薄膜 .SEM照片和AFM均显示该薄膜具有很好的均匀性 ,非晶碳粒的尺寸为 90～ 10 0nm .喇曼谱分析表明 ,薄膜的主要成分为SP2 非晶碳 .对样品薄膜的不同区域进行了场发射特性的测试 ,各被测区域的场发射特性表现出很好的一致性 .在不同电压下进行了发光测试 .实验表明 ,样品薄膜的开启电场很低 ,约为 4V/ μm ,在 7V/ μm的电场下 ,场发射电流密度为 0 0 16A/cm2 ;用迭代法计算得薄膜的功函数为 0 65V .通过对样品的实际发射面积估算 ,得出发射点密度为 6× 10 4cm- 2 .更多还原

【Abstract】 Non crystalline nano carbon films are coated on (100) n Si substrate by using the plasma enhanced chemical vapor deposition (PECVD) method at a temperature 420 K. The film consists of carbon grain size of 90～100 nm. Roman spectrum shows that the main component is non crystalline carbon with SP2 bond. The measurements at different areas show good field emission characteristics and uniformity. The threshold field is very low(about 4 MV/m). The current density of 0 016 A per square centimeter was obtained under an electric field of 7 MV/m. The effective work function of 0 65 eV was calculated by an iterative method. And the emission spot density was estimated to be about 60 000 per square centimeter.更多还原