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金刚石薄膜的反应离子刻蚀
Reactive Ion Etching of Diamond Films
【摘要】 反应离子刻蚀是金刚石薄膜图形化的一种有效方法。研究了用O2 及与Ar的混合气体进行金刚石薄膜图形化刻蚀的主要工艺参数 (射频功率、工作气压、气体流量、反应气体成分与比例等 )对刻蚀速率和刻蚀界面形貌的影响 ,兼顾刻蚀速率和刻蚀面平滑程度等关键因素 ,建立了金刚石薄膜刻蚀的优化工艺参数 ,达到了较满意的图形效果。
【Abstract】 Reactive Ion Etching is an effective technique for etching diamond films.Reactive Ion Etching of Diamond Film using O 2 or a gas mixture of O 2 and Ar was investigated.Effects of rf power,system pressure,flux and O 2 concentration in the gas mixture on etch rate and surface appearance were studied.Considering the key factors of the etching rate and the flatness of etching side,optimized technologic parameters for the etching of diamond films were achieved and the satisfied patterns were obtained.
【关键词】 反应离子刻蚀;
金刚石薄膜;
刻蚀速率;
【Key words】 Reactive Ion Etching; diamond films; etch rate; plasma; dc bias;
【Key words】 Reactive Ion Etching; diamond films; etch rate; plasma; dc bias;
【基金】 国家自然科学基金资助项目 !(599850 0 7)
- 【文献出处】 微细加工技术 ,MICROFABRICATION TECHNOLOGY , 编辑部邮箱 ,2000年03期
- 【分类号】TN304
- 【被引频次】20
- 【下载频次】293