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真空退火对周期性界面掺杂Ni80Co20薄膜磁性的影响

EFFECT OF ANNEALING ON THE MAGNETIC PROPERTIES OF Ni80Co20 THIN FILMS WITH IMPURITY LAYERS

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【作者】 童六牛何贤美鹿牧

【Author】 TONG LIU\|NIU HE XIAN MEI (Department of Metallurgical Engineering, East China University of Metallurgy, Maanshan\ 243002, China) LU MU (Department of Physics, State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing\ 210093,

【机构】 华东冶金学院冶金工程系!马鞍山243002南京大学物理系固体微结构物理国家重点实验室!南京210093

【摘要】 用磁控溅射方法制备了两个具有不同Fe层厚度的 [Ni80 Co2 0 (L) /Fe(tFe) ]N 多层膜系列样品 ,其中tFe=0 1和 2nm .研究了两个系列样品的磁及输运性质随Ni80 Co2 0 层厚度L的变化关系 .在退火态 [Ni80 Co2 0 (L) /Fe(0 1nm) ]N 系列样品中 ,发现各向异性磁电阻 (AMR)和横向磁电阻 (TMR)在L为 10nm附近存在一较宽的增强峰 ,其峰位与制备态 [Ni80 Co2 0 (L) /Fe(2nm) ]2 5多层膜TMR的增强峰位一致 .当L小于Ni80 Co2 0 合金的电子平均自由程时 ,制备态 [Ni80 Co2 0 (L) /Fe(0 1nm) ]N 样品的各向异性磁电阻 (Δρ)和零场电阻率 ρ都随L的减小而增加 ,且ρ的增量超过Δρ的增量 .ρ随L的依赖关系可采用Fuchs Sondheimer理论描述 .在L小于 10nm时 ,制备态界面掺杂 [Ni80 Co2 0 (L) /Fe(0 1nm) ]N 系列样品的矫顽力Hc 随L近似直线上升 ,在L大于 10nm后趋于饱和 .退火后Hc显著下降 .实验结果表明 ,在多层膜结构中 ,界面散射可导致 ρ和Δρ的增强 ;磁性合金界面层还可导致畴结构的改变及TMR和AMR的增强 .

【Abstract】 The magnetic and transport properties of two series of sputtered [Ni 80 Co 20 (L) /Fe( t Fe )] N multilayers (MLs) with different Fe layer thickness of t Fe =0 1 and 2nm, and varying L were studied and compared with each other. An enhanced anisotropic magnetoresistance (AMR) peak around L =10nm was observed for annealed films with t Fe =0 1nm. The position of the enhanced AMR peak is the same as that of transversal MR peak for the deposited MLs with t Fe =2nm. For the as\|deposited films with impurity Fe layers, when L becomes lower than the electron mean free path of Ni 80 Co 20 alloy, the zero\|field resistivity ρ increases with decreasing L and the increase of ρ will exceed that of AMR (Δ ρ ). The L dependence of ρ can be described by Fuchs\|Sondheimer theory. The coercivity H c of the as\|deposited films with t Fe =0 1nm increases rapidly with increasing L for L <15nm and is almost saturated for L >15nm. The dependence of H c on L may be related to the interface structure of MLs, which is indicated by a big drop of H c in the annealed films. Our experimental data show that the interface scattering in MLs may increase AMR; the magnetic alloy interfacial layers in MLs may change the domain structure and enhance transverse MR and AMR.

【基金】 安徽省教育委员会自然科学基金!(批准号 :99J10 174)资助的课题&&
  • 【文献出处】 物理学报 ,ACTA PHYSICA SINICA , 编辑部邮箱 ,2000年11期
  • 【分类号】O484
  • 【被引频次】2
  • 【下载频次】62
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