【摘要】 从实际测量和单粒子MonteCarlo模拟两个方面研究了 6H SiC的电子输运规律 ,在模拟中考虑了 6H SiC主要的散射机理 ,模拟的结果体现了 6H SiC具有良好的高温和高场特性以及迁移率的各向异性 ,其横向迁移率和纵向迁移率相差近 5倍 .模拟结果和实验数据的对比说明了对 6H SiC输运特性的模拟是正确的 .更多还原

【Abstract】 Temperature\|and electric field\|dependent electron transport in 6H\|SiC has been studied by single\|particle Monte Carlo technique,and the Hall electron mobility in 6H\|SiC has been measured over the temperature range 77?K<T<700?K.The physical model used in the simulation is developed considering the main scattering mechanisms in details.The results show the excellent high\|temperature and high field properties as well as anisotropy of mobility.The ratio μ ‖c /μ ⊥c in 6H\|SiC is nearly 5,and the saturation velocity v\-s is 2×10\+7?cm/s.The simulated results are in good agreement with measured data in a wide range of temperature and electric field.更多还原