【摘要】 用PECVD薄膜沉积方法 ,成功地制备了磷掺杂纳米硅 (nc Si:H(P) )薄膜 .用扫描隧道电镜 (STM )、Raman散射、傅里叶变换红外吸收 (FTIR)谱、电子自旋共振 (ESR)、共振核反应 (RNR)技术对掺磷纳米硅进行了结构分析 ,确认了样品的微结构为纳米相结构 .掺磷后膜中纳米晶粒的平均尺寸d减小 ,一般在 2 5— 4 5nm之间 ,且排列更加有序 .掺磷nc Si:H膜具有较高的光吸收系数 ,光学带隙在 1 73— 1 78eV之间 ,和本征nc Si:H相同 .掺杂nc Si:H薄膜电导率在 10 -1— 10 1Ω-1·cm-1之间 ,比本征nc Si:H提高了二个数量级 ,室温暗电导最高已达 5 0 5Ω-1·cm-1.同时电导激活能在 0 0 1— 0 0 3eV之间 ,比本征nc Si:H进一步降低更多还原

【Abstract】 Phosphor\|doped nc\|Si:H(nc\|Si:H(P)) films were obtained by plasma enhanced chemical vapor deposition.The structural characteristics of nc\|Si:H(P) films were investigated by means of scanning tunneling microscopy\,Raman scattering,Fourier transform,infrared absorption spectroscopy, electron spin resonance and resonant nuclear reaction techniques.The measurements showed that the nc\|Si:H(P) films have two\|phase structure and the grains were embedded in the amorphous matrix.It was found that the grain size of the nc\|Si:H(P) films was about 2\^5—4\^5nm,which was smaller than that of nc\|Si:H films (about 3—6?nm).It was also found that the optical absorption coefficient was quite high and the optical gap E opt g was in a range of 1\^73—1 78?eV,which was almost the same as that of nc\|Si:H films.The conductivity of nc\|Si:H(P) films was in the range of 10 -1 —10\+1?Ω -1 ·cm -1 ,two magnitudes higher than that of nc\|Si:H films and the maximum room\|temperature conductivity reached to 50\^5?Ω -1 ·cm -1 .The activation energy of conductivity of the nc\|Si:H(P) films was in the range of 0\^01—0\^03?eV,lower than that of nc\|Si:H film.更多还原