【摘要】 通过变磁场霍尔测量方法 ,采用由迁移率谱和多载流子拟合过程相结合的混合电导法 ,在 1 2 - 30 0K范围内 ,获得了两块分子束外延 (MBE)生长的p Hg1-xCdxTe(x =0 2 2 4)样品中的轻、重空穴以及体电子、表面电子的浓度和迁移率 .此外 ,在实验中 ,还直接观察到了轻空穴对电导张量分量的贡献 .实验值不仅具有明确的物理意义 ,而且有助于红外探测器模型的建立 .更多还原

【Abstract】 We have simultaneously determined the densities and mobilities of light and heavy holes at various temperatures (1 2?K to 300?K) in two molecular beam epitaxy\|grown p\|type Hg\-\{1- x \}Cd\- x Te ( x =0.224) samples from variable magnetic\|field Hall measurement by using a hybrid approach consisting of mobility spectrum analysis followed by a multi\|carrier fitting procedure.In addition, we directly observe the contribution of the light hole to the conductivity tensor component. The experimental values obtained in this work should be useful in modeling of HgCdTe infrared detectors.更多还原