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用低能离子溅射剥层和高能离子背散射组合方法进行薄膜原位分析
IN SITU ANALYSIS OF HIGH ENERGETIC ION RBS COMBINED WITH LOW ENERGETIC ION SPUTTERING FOR THIN FILMS
【摘要】 介绍了将离子枪组合于卢瑟福背散射分析靶室中构成Sputtering/RBS原位分析实验装置,用低能离子溅射剥层与高能离子背散射组合对薄膜样品进行成分和深埋层分析方法.给出了对样品分析的三个例子.对Au/Si 样品的分析着重讨论了Au 在Ar+ 溅射剥层时的溅射速率;对Si/GeSi/Si 和WSix/SiO2/Si 样品的深埋层分析,提高了样品分析的深度分辨率.讨论了这一Sputtering/RBS组合分析方法的优缺点和在薄膜材料研究中可能的应用
【Abstract】 With an experimental system composed of an ion gun and a RBS analysis chamber,in situ analysis of low energetic ion sputtering and high energetic ion RBS for thin films is carried out.We analyze,for three kinds of samples,their compositions and deeply\|buried layers.In the analysis of Au/Si sample,the sputtering rate of Au with Ar\++ etching is discussed and in the analysis of deeply\|buried layers of Si/Ge\|Si/Si and WSi\- x /SiO\-2/Si samples,the depth resolution is obviously improved.The advantages and disadvantages of this analytical method in thin film studies,as well as its potential applications,are discussed.
- 【文献出处】 物理学报 ,ACTA PHYSICA SINICA , 编辑部邮箱 ,2000年01期
- 【分类号】O484.5
- 【被引频次】1
- 【下载频次】75