【摘要】 利用同步辐射光电发射谱研究了Ｃｏ 与ＣＨ３ＣＳＮＨ２ 处理的Ｓ钝化ＧａＡｓ（１００） 的界面形成．发现其界面反应较弱，Ｃｏ 覆盖层达到０－８ ｎｍ 时，形成稳定的界面．ＧａＡｓ 表面上和Ｓ原子形成桥键的Ｇａ 原子与Ｃｏ 发生交换反应并扩散到覆盖层中，形成Ｃｏ—Ｓ键．Ｃｏ 覆盖层表面无偏析Ａｓ 的出现，与Ｃｏ／ＧａＡｓ（１００） 界面不同，这表明ＧａＡｓ 表面的Ｓ钝化可有效地阻止Ａｓ 原子向覆盖层的扩散更多还原

【Abstract】 Interface formation between Co and the sulfur\|passivated GaAs(100) (by CH\-3CSNH\-2 treatment) has been studied by synchrotron radiation photoemission spectroscopy.Interface reaction is weak,a stable interface forms at the coverage of 0.8?nm.Ga atoms bonded with S at the surface exchange with Co atoms and cause the formation of Co\|S bonding,no segregated As appears at the surface of Co overlayer,in contrast with the case of Co/GaAs(100).This indicates that S\|passivation on GaAs(100) is an effective way of inhibiting the interdiffusiion of As and Ga through the coverage.更多还原