【摘要】 为研究氧化依（ＩｒＯ_２）对ＰＺＴ铁电薄膜疲劳性能的影响，利用直流（ＤＣ）磁控反应溅射（ｓｐｕｔｔｅｒｉｎｇ）工艺成功地在ＳｉＯ_２／Ｓｉ（１００）衬底上制得了高度取向的ＩｒＯ_２薄膜．并在其上制成ＰＺＴ铁电薄膜．讨论了溅射参数（溅射功率、 Ａｒ／Ｏ_２比、衬底温度）以及退火条件对氧化铱薄膜的结晶、取向和形态的影响．更多还原

【Abstract】 Iridium oxide （IrO₂） thin films were successfully grown on SiO2/Si（100） substrate by a DC magnetron reactive sputtering method with an Ir target（99.9% purity）. PZT ferroelectric thin films were deposited by a sol-gel method. The as-deposited thin films were annealed with a thermal annealing process, after that the films were highly directed at （110） or （200）. The effect of sputtering parameters such as gun power, oxygen partial pressure （Ar/O₂） and growth temperature and annealing conditions on the crystalline nature and morphology of IrO₂ thin films was discussed.更多还原