【摘要】 本文提出了适于２．μｍ　ＧａＩｎｓＳｂ台面结构探测器制备的ＨＦ／Ｈ２Ｏ２／ Ｃ４Ｈ６Ｏ６／Ｈ２Ｏ腐蚀液体系，并确定了合适的成分配比。实验结果表明，该腐蚀液 体系对ＧａＩｎＡｓＳｂ材料腐蚀速度适中、侧向腐蚀小、不破坏光刻胶保护、腐蚀面 平整、腐蚀槽齐整、受外延付表面质量影响较小。更多还原

【Abstract】 The mesa etching of 2 .4μm GaInAsSb infrared detectors has been investigated in this present work, a etchant consisting of hydrofluoric acid, hydroge peroxide, tartic acid and water for the chemical etching GaInAsSb/GaSb materials has been proposed and a suit- able ratio of this etchant for fabricating 2.4μm GaInAsSb infrared detectors has been deter- mined by experiment results. This will be better the surface passivation of GaInAsSb in- frared detectors.更多还原