节点文献
M-IDG结构小型超宽带衰减器的FDTD仿真和实现
FDTD Simulation and Implementation of Ultra Wide Band Miniaturized M-IDG Attenuator
【摘要】 本文在分析新型传输线 -微带加载插入介质波导 (M- IDG)基本特性的基础上 ,用FDTD法仿真设计了小型、超宽带衰减器。电路尺寸分 5.1× 2 5mm2 和 5.1× 40 mm2 两种。对于1 0 d B衰减器 ,工作频带 0 .5~ 1 8GHz内衰减起伏小于 1 .0 d B;30 d B衰减器 ,在 2 .0~ 1 8GHz带宽内 ,衰减起伏小于 2 .5d B。实测结果与 FDTD仿真结果基本吻合。
【Abstract】 The basic properties of the microstrip-loaded inset dielectric guide (M-IDG) are analyzed by FDTD method,then this kind of ul tra wide band attenuators are implemented by FDTD simulation.There are two kinds of the circuit sizes—5.1×25mm 2 and 5.1×40mm 2.For 10dB attenuator,the flu ctuation of attenuation is less than 1.0dB within 0.5~18GHz bandwidth.For 30dB a ttenuator,the fluctuation is less than 2.5dB within 2.0~18GHz bandwidth.The meas urement data are in agreements with the results of FDTD simulation.
- 【文献出处】 微波学报 ,JOURNAL OF MICROWARES , 编辑部邮箱 ,2000年03期
- 【分类号】TP391.9
- 【下载频次】79