【摘要】 目的　探讨半导体激光穴位照射镇痛效应及其镇痛的机制。方法　大鼠随机分成照射组、模拟照射组和纳洛酮预处理组。采用半导体激光照射大鼠“足三里”穴位 ,用电刺激鼠尾 -嘶叫法测定激光照射前后的痛阈。结果　照射后大鼠的痛阈明显提高 ,这种镇痛作用可被纳洛酮预处理所翻转。结论　半导体激光穴位照射产生镇痛效应机制可能与激光照射促进内源性阿片物质释放有关。更多还原

【Abstract】 Effective pain relieving was achieved in pain clinic with low powered semiconductor laser irradiation in acupoints. In the present study, semiconductor laser irradiation was used at zhu-San-Li point in rats to observe its analgesic effect and its possible mechanism. Rats were divided into irradiation, sham irradiation and naloxane pre-treatment groups in random. Pain threshold was measured by tail electrical stimulation-vocalization before and after irradiation. The results showed that the pain threshold, compared with the basal threshold, was significantly increased after the laser irradiation. Naloxane pre-treatment could reverse the analgesic effect of laser irradiation. It suggests that semiconductor laser irradiation at acupoint could produce analgesic effect which possibly related to the endogenous opiates release.更多还原