【摘要】 合金成分、沉积条件以及热处理工艺是影响薄膜性能极其重要的因素 ,为便于电阻薄膜的合理选材 ,分析了应用于中阻值范围内的 Ni Cr- O系及 Cr- Si系溅射薄膜的膜层结构 ,对比了它们在热处理前后的电性能变化情况 ,并通过短期试验考核它们在应用中劣化的可能性 .实验结果表明 ,经退火处理后 ,Cr- Si系溅射薄膜的膜层构成主要为非晶态基体及 Si Ox 氧化物包围纳米级硅化物相 ,而 Ni Cr- O系溅射薄膜的膜层主要由 Cr2 O3和原子范围短程有序的金属相组成 ;Cr- Si系电阻薄膜比 Ni Cr- O系电阻薄膜致密稳定 ,前者在电性能方面具有抗电压击穿、耐潮湿等优点 .更多还原

【Abstract】 Alloy composition, depositing conditions and annealing procedures are important factors for affecting thin film properties. In order to select suitable materials for resistive films, microstructures of NiCr O and Cr Si sputtered films used for the mid range of resistance were analyzed. Electrical properties of the films before and after annealing were compared. The possibility of degradation was examined by short time test. The results show that, after annealing, microstructure of Cr Si sputtered film is nanometres’ chromium silicides embedded in amorphous matrix and SiO x , while NiCr O sputtered film is a mixture of Cr 2O 3 and atomic short range order metallic phases. Cr Si resistive film is tighter and more stable than NiCr O resistive film, the former has the advantageous electrical properties to resist puncture voltage and damp.更多还原