【摘要】 作者对AlGaAs/GaAs结构调制掺杂材料及多量子阱材料 ,分别使用电子束或质子束辐照 电子束辐照能量为 0 .4～ 1.8MeV ,辐照注量为 1× 10 13cm- 2 ～ 1× 10 16 cm- 2 ,质子束辐照能量为 2 0～ 130keV ,辐照注量为 1× 10 11cm- 2 ～ 1× 10 14 cm- 2 .辐照前后的样品均经过深能级瞬态谱 (DLTS)的测试 .测试结果表明 ,电子束辐照引入了新缺陷 ,其能级位置为E3=Ec-0 .6 5eV ,而质子辐照引入的深缺陷能级为E1=Ec- 0 .2 2eV ,电子和质子束辐照同时对与掺Si有关的原生缺陷DX中心E2 =Ec- 0 .4 0eV也有影响 ,即浓度发生改变 ,峰形亦不对称 ,说明其中包含有其他邻近缺陷的贡献 .DLTS测试给出了这些深中心的浓度及俘获截面等参数 .更多还原

【Abstract】 The modulation doped AlGaAs/GaAs and multiple quantum well of AlGaAs/GaAs were irradiated by electron with the energy from 0.4Mev to 1.8Mev and the fluence from 1×10 13 cm -2 to 1×10 14 cm -2 and the proton beam with the enengy from 20keV to 130keV and the fluence from 1×10 13 cm -2 to 1×10 14 cm -2 . All irradiated and unirradiated samples were measured by DLTS that showed new defects with deep level at E s= E c-0.65eV were induced by electron irradiation,and the defect with deep level at E 1= E c-0.22eV were induced by proton irradiation.Primitive defects (DX centres with deep level at E 2= E c-0.4eV) were influened both by electron and proton irradiation. The concentrations and captare cross sections of these deep level centres were also obtained by the DLTS.更多还原