【摘要】 在微波等离子CVD设备中 ,微波电磁场的不均匀分布将导致等离子球和基片的温度不均匀 ,从而降低CVD金刚石的质量 ,因而基片加热是需要的。材料的吸收微波能的能力同微波频率、电场强度、材料的介电常数和介电损耗及材料体积相关 ,材料的介电常数、介电损耗、导热率又同温度相关。基于热力学理论 ,本文用强吸收微波能的SiC材料作为了基片加热材料 ,放在微波等离子腔的基片下 ,研究三维轴对称温度场模型 ,该模型的基片加热材料的介电常数、介电损耗和体积随温度变化 ,获得了温度分布的解析式 ,计算结果显示该模型能得到直径 76 .2mm的均匀温度分布 ,温度变化少于 10℃ ,因而可用于基片加热。更多还原

【Abstract】 In microwave plasma CVD equipment,the inhomogeneous distribution of microwave electromagnetic field results in the inhomogeneous temperature of the plasma ball and substrate,and lowering quality of CVD diamond,so it is necessary to heat the substrate.Material’s absorbability to microwave energy relates with microwave frequency,electric field intensity,material’s dielectric constant,dielectric loss and material’s volume.It is a function that temperature to material’s dielectric constant and loss and thermal conductivity and so on. Based on thermodynamic theory, this paper researched the three dimensional axialsymmetrictemperature field model,in which above parameters were changed with temperature to heating substrate material, obtained analytic expression of temperature distribution, used silicon carbon material which can absorb microwave energy powerfully, and used it as material of heating substrate and laid it down in the substrate in the microwave plasma cavity. The calculated results show that the model can come into homogeneous temperature distribution, which has  76.2mm diameter and temperature change is only less 10℃,so it is very useful to heat the substrate.更多还原