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Bi₄Ti₃O₁₂铁电薄膜X射线光电子能谱研究

Study on Bi₄Ti₃O₁₂ Ferroelectric Thin Film Structure with XPS Spectra

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【Author】 ZHANG Yin 1,2 , WANG Hong 2, SHANG Shu xia 2, WANG Shao wei 2, WANG Min 2, QI Shang kui 3, LIU Xi ling 1 (1.Shandong Institute of Education,Jinan 250013,China; 2.State Key Lab.of Crystal Material,Shandong University,Jinan 250100,China; 3

【机构】山东教育学院!济南250013；山东大学晶体材料国家重点实验室!济南250100；中国科学院兰州化学物理研究所!国家重点实验室；兰州730000；山东教育；

【摘要】本文采用化学溶液沉积 (CSD)工艺在Si(10 0 )衬底上制备了Bi4 Ti3O12 铁电薄膜 ,这种薄膜的X射线衍射 (XRD)结果显示其具有较好的结晶性。运用X射线光电能谱仪 (XPS)对薄膜的结构进行了研究 ,分析结果表明 ,衬底中Si向镀在其上的Bi4 Ti3O12 膜层内扩散 ,影响扩散的主要因素是膜厚及退火温度。更多还原

【Abstract】 Bi 4Ti 3O 12 ferroelectric thin films were prepared on Si(100)substrates by chemical solution deposition (CSD).The results of X ray diffraction (XRD)patterns show the films have good orientation.A study of film structure by means of X ray photoelectron spectroscopy(XPS)has been made.It was indicated that Si in substrate diffused into the films.The important facts that influence those diffusion are the thickness of film layers and anneal temperature.更多还原