【摘要】 使用深掺杂方法在 Si材料中掺入金原子后 ,其电阻随温度 T的变化关系由主要依赖于 T- 3/ 2 项的浅掺杂材料变成主要依赖于 exp( -E/ KT)项的深掺杂材料 ,从而大幅度地提高了掺金 Si材料对温度的敏感性 .在理论上深掺杂 Si材料比浅掺杂 Si材料对温度的敏感性提高了约 1 0 0 0倍 .用深掺杂方法制成的微型流量传感器特性的测量证明了以上理论 .深掺杂 Si材料的应用不但提高了微型流量传感器的灵敏度 ,也大幅度地降低了其时间常数 .更多还原

【Abstract】 The change of resistance of single crystal silicon material based on deep impurities depends on an exponential term, exp(- E/kT ), rather than the T -3/2 term based on shallow impurities. It can enhance the temperature sensitivity by almost 1000 times. This is proved by the measurementsof the micro flow sensors made by deep impurities silicon. The application of the deep impurity silicon material not only enhances the sensitivity of the micro flow sensor, but also reduces its time constant greatly.更多还原