【摘要】 采用等离子体增强热丝化学气相沉积法在Si(111)衬底上生长金刚石薄膜 ,扫描电子显微镜 (SEM )和X射线衍射 (XRD)分析结果表明金刚石晶体颗粒在〈111〉方向实现了取向生长。随H2 气氛中CH4 浓度的提高金刚石的形核率增加 ,但当CH4 在H2 中的体积分数≥ 0 .0 4时石墨竞相生长 ,无金刚石生成。等离子体增强形核技术能极大地提高金刚石的形核密度 ,在高密度等离子体的作用下 ,金刚石的形核密度可达 10 9个 /cm2 。更多还原

【Abstract】 Oriented diamond films were synthesized on Si(111) substrates via plasma enhanced hot filament chemical vapor deposition (PE-HFCVD),and the diamond films were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD).The results indicated that plasma enhanced nucleation (PEN) increased dramatically nucleation density of diamond on Si(111) substrates,at the same time,density and distrbution of the plasma had a great effect on nucleation and uniformity of diamond thin film.With the concentration of CH 4 in H 2 increasing,the nucleation density of diamond enhanced slightly,however,when the concentration of CH 4 in H 2 was more than 0.04,graphite phase grew at a high speed,diamond phase in the thin film died away.更多还原