【摘要】 用 PECVD淀积了低介电常数的掺氟氧化硅介质薄膜 ,Si F4 的流量达到 60 sccm时 ,薄膜的相对介电常数可以降低到 3.2。对试样的 FTIR分析表明 ,薄膜中大部分的氟以 Si- F键形式存在。C- V特性测试表明 ,薄膜介电常数随氟含量的增加而减小 ,但薄膜的吸水性随氟含量的增加而变大。并进一步讨论了介电常数和薄膜稳定性与薄膜中氟原子含量之间的内在联系。更多还原

【Abstract】 Fluorine doped s ilicon oxide films are prepared using plasma enhanced chemical vapor deposition (PECVD) F doped silicon dioxide film with relative dielectric constant of 3 2 is deposited at an SiF 4 flow rate of 60 sccm With the increase of F contents in the film, the dielectric constant decreases The decrease of die lectric constant is more obvious when the flow rate of SiF 4 is small The wa ter resistant ability deteriorates with the increase of F concentration in the f ilm The mechanism of the decrease of dielectric constant in these films is inve stigated The relation between F concentration and the water resistant abilit y of the film is also discussed更多还原