【摘要】 在常规混合模式晶体管的基础上 ,提出了一种新的器件结构—— Si- Ge异质结基区 Bi-MOS混合模式晶体管 ( BMHMT)。由于基区采用禁带宽度较窄的 Si- Ge合金材料 ,引起空穴向发射区反注入的势垒提高 ,这样 ,一方面减小了空穴电流 IB,提高了注入效率 ;同时又增大了迁移率 ,从而提高特征频率。因此 ,这种器件具有 β高、基区电阻低、基区输运时间短等优点更多还原

【Abstract】 A Si-Ge heterojunctio n base Bi-MOS hybrid mode transistor(BMH MT) based on the regular hybrid mode tra nsistor is proposed S ince Si-Ge alloy,whose forbidden band is narrower,is adopted for the base region ,the barrier of the hole injecting fro m base region to emit region increases, which causes the hole current to decreas e and increases the injecting efficiency .The device features high β,low base res istance and short transport time in the base region,which is demonstrated by sim ulation of three-terminal operation char acteristics of the device [WT5HZ]更多还原