【摘要】 采用射频共溅射复合靶(Si+Ge+石墨C)技术制备Si1-x-yGexCy三元合金薄膜.Si,Ge和C的含量用其靶的相对面积来表示,对样品的后退火处理是在N2气保护下恒温30min后自然降温到室温.通过IR,Raman和XPS的测量结果表明,所制备的薄膜中含有Si,Ge,C3种元素,有较明显的Si-C,Si-Ge,Ge-C键合.通过电阻率—温度谱ρ-T的测量研究薄膜的电学性能,测量了不同C含量和不同温度退火后薄膜ρ-T关系的变化,发现随C含量的增加电阻率增大,激活能也增大;450℃退火后电阻率普遍变小,激活能也变小,对这一规律性的结果作了解释更多还原

【Abstract】 The technique of RF co- sputtering compound targets(Si+ Ge+ graphite) have been used to prepare ternary Si1 - x- y Gex Cyalloy films.Their contents are expressed respective- ly by the relative areas of Si,Ge and C targets.As for the preparation of post- annealed sam- ple,it was first kept at an unchanged temperature for3 0 min,and then cooled to room tem- perature naturally in N2 atmosphere.By IR,Raman and XPSmeasurements the results indi- cate that these films contain three elements of Si,Ge,and C,and they are clearly composed of Si- C,Si- Ge and Ge- C vibration.The electrical properties of these films are studied and the temperature dependence of resistivity of ternary Si1 - x- y Gex Cy alloy films are measured, with various C concentrations and annealing temperatures.It is found that as C- content in- creases,the resistivity rises,and the activation energy also intensifies.After being annealed at 450℃ ,the resistivity of the sample commonly gets smaller,the activation energy reduces too,and the explanations for these regular results are given.更多还原