【摘要】 研究一种双金属接触的GaAs半导体探测器在 1 4MeV中子辐照下的性能 .测量了探测器经过 1 0 12 n/cm2 中子辐照剂量后的反向漏电流、电荷收集效率和最小电离粒子能谱 ,并且与 6 0 Co 1 2 5MeV光子辐照的测量结果相比较 .对中子辐照引起探测器时间性能变化和辐照损伤机制进行了探讨 .并根据实验结果提出了这种双金属接触GaAs探测器灵敏层分布的一种假设 ,理论计算和实验数据相符合更多还原

【Abstract】 Radiation hardness of a particle detector, double metal contact GaAs semiconductors has been investigated in 14 MeV neutron exposure. The leak current, the charge collection efficiency and the spectrum of MIPs are measured after 10 12 n/cm 2 dose. The results are compared with 60 Co 1.25MeV γ photons radiation. The mechanism of radiation damage and the effect on time performances of GaAs detectors are discussed. A hypothesis of the active layer distribution of the GaAs detectors based on experiment data is given. The computation agrees with test results.更多还原