【摘要】 利用射频磁控反应溅射以Ar、CH4 为原料气体 ,在较宽的工艺参数范围内制备出了GexC1-x薄膜。利用X射线衍射 (XRD)、X射线光电子谱 (XPS)对制备的薄膜进行了分析。结果表明 ,GexC1-x薄膜的结构强烈依赖于制备的工艺参数。当沉积温度较低、射频功率不大时 ,GexC1-x薄膜主要为非晶态结构。随着沉积温度升高、射频功率增大 ,薄膜中出现Ge微晶相。GexC1-x薄膜中Ge与C发生电荷的转移 ,形成化学键。更多还原

【Abstract】 The Ge xC 1-x films were prepared by radio frequency magnetron reactive sputtering in Ar/CH\-4 in a wide range of processing parameters.The structure of Ge xC 1-x films was investigated by using X\|ray diffraction (XRD) and X\|ray photo\|electron spectroscopy (XPS).The results show that the as\|deposited Ge xC 1-x films have an amorphous structure.If the RF power is increased or substrate temperature is elevated,germanium microcrystals will appear in the amorphous films.The results of XPS and IR indicated that there existed a charge transfer between germanium and carbon in the films.更多还原