【摘要】 利用高温高压合成的立方氮化硼单晶材料 ,采用恒浓度高温扩散方法制备 n型立方氮化硼半导体材料 .通过化学气相沉积方法在 n型立方氮化硼上外延生长 p型金刚石薄膜 .在此基础上 ,通过欧姆接触电极的制作 ,制备出金刚石薄膜 /立方氮化硼异质 pn结 ,并给出 pn结的伏安特性曲线 .更多还原

【Abstract】 The preparation of the hetero junction of diamond and cubic boron nitride is reported in this paper. The cubic boron crystal was synthesized by the high temperature and high pressure method. n type cubic boron nitride was made by the constant concentration diffusion method in a vacuum chamber at a high temperature. p type diamond film was grown on the n type cubic boron nitride surface epitaxially by chemical vapor depositon. Omic contacting electrode was made on both the surfaces of the pn junction. The I V detected result shows that the pn junction of diamond and cubic boron nitride has well defined nonlinear I V characteristics as normal pn junction.更多还原