【摘要】 用改进的液相外延方法 L PE 生长了无铝的 In Ga As P/Ga As分别限制单量子阱半导体激光器 ,测量其远场分布近似为高斯分布 .用缓变波导理论分析了产生这种分布所对应的光波导结构的折射率分布模型 ,并简单解释了其生成原因 ,为改善光束质量提供了参考更多还原

【Abstract】 Al free InGaAsP/GaAs single quantum well separate confinement heterostructures have been grown by liquid phase epitaxy (LPE). The measurements showed that the far field distribution was approximately a Gaussian profile. The refractive index profile of dielectric optical waveguides was analyzed by theory of grading waveguide. The work is useful for improving the beam quality.更多还原