【摘要】 室温下在 Ni Cr合金 ( Hastelloy c-2 75)基底上应用 Ar+ 离子源辅助 ,准分子脉冲激光沉积了Ce O2 薄膜 .结果表明 :在合适的外部条件控制下 ,直接在 Ni Cr合金基底上可以制备出 c-轴取向的 Ce O2薄膜 ,但这时的 Ce O2 薄膜在其 a-b平面内没有观察到织构的信息 ;进一步在相同的条件下 ,首先在 Ni Cr合金基底上制备一层 YSZ( Yttria-Stabilized Zirconia) ,再在 YSZ/Ni Cr上制备 Ce O2 薄膜 ,这时的 Ce O2薄膜不但是 c-轴取向 ,同时在其 a-b平面内织构 .更多还原

【Abstract】 The CeO 2 films were deposited by pulsed laser ablation on hastelloy substrates at room temperature with the Ar + ion beam assistance.The results show that when the CeO 2 films are deposited directly on the hastelloy substrates,the desired (001) normal textured are achieved,but there is no evidence for alignment of in plane crystal axes. Further experimental results indicate that CeO 2/YSZ(Yttria Stabilized Zirconia)/Hastelloy films deposited under the same conditions are not only normal orientation to the substrate’s surface but also highly in plane textured.更多还原