【摘要】 研究了晶格与 In P匹配的 In Ga As P超晶格材料的热稳定性 ,实验结果表明在 60 0℃以上的热退火下会产生量子阱混合 .采用 1 .0 64 μm连续输出的 Nd∶YAG激光器对超晶格外延片进行了聚焦辐照 ,室温光荧光谱得到了 1 84 me V的蓝移 ,说明激光辐照与热退火一样会产生量子阱混合效应 ,光荧光谱的双峰位表明运用激光处理量子阱外延片具有一定的空间选择性 .衬底预加热和对激光束的聚焦可以在不减弱处理效果的情况下有效地减少激光辐照的时间 ,以减小晶格损伤更多还原

【Abstract】 The thermal stability of InGaAsP superlattice (SL) structure is studied. The quantum wells intermixing (QWI) is observed while annealing temperature above 600℃. About 184meV blue shift in photoluminescence (PL) spectrum on SL is obtained when the wafer is irradiated using cw 1.064μm Nd:YAG laser, demonstrating QWI could obtained from laser irradiation as well as furnace annealing. Two peaks in PL spectra denote spatial resolution of laser processing. Irradiating time could reduced by heating the wafer in advance and focusing the laser beam while not weakening effect of process so as to reduce damage of the lattices.更多还原