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聚合物LB膜定向铁电液晶的特性

The Characteristics of Polymer LB Films Aligned Ferroelectric Liquid Crystals

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【作者】 吕瑞波张舒雁张彦东邢中菁顾建华邓慧华陆祖宏

【Author】 Lu Ruibo; Xu Keshu; Zhang Shuyan; Zhang Yandong; Xing Zhongjing (Department of Physics State Joint Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Fudan University, Shanghai 200433) Gu Jianhua; Deng Huihua; Lu Zuhong (Nartiona

【机构】 复旦大学三束材料改性国家重点实验室!上海200433东南大学分子与生物分子电?

【摘要】 利用新近合成的聚酰亚胺LB膜定向铁电液晶分子,通过原子力显微镜对经不同亚胺化温度处理的聚酰亚胺LB膜进行扫描探测,发现相应的LB膜具有不同的形貌结构,认为高温亚胺化的LB膜可以提供较高的势垒,这为铁电液晶双稳记忆性的出现提供了可能,而LB膜的超薄特性有利于开关过程中表面聚积电荷的中和与释放,保证了器件优良的双稳记忆性的最终获得以及微秒量级快速响应的实现。

【Abstract】 Newly-synthesized polyimid (PI) LB films were deposital and used to align ferroelctric liquid Crystals (FLCs). Atomic force microscope was used to investigate the morphology of PI LB films. It is found that LB films show different crystalline structure when they were treated by the different imidization temperatures. The LB films imidized at the high temperature show the orderly oriental polymer chain structure on the sustrate surfaces while the low temperature treated LB films show an irregular amphours-like aggregate structure. It demonstrates that these two types of PI LB films show different surface orderness and crystallinity. The surface-stabilized FLC cells that are aligned by the high temperature imidized PI LB films have the fast response times of 80 and 90us to the rising and decaying stages respectively and an excellent bistability to the completeness, while the cells which are aligned by the low temperature eded PI LB films show slower response times longer than 1ms and the incomplete memory capability. According to the AFM observations and the charge-transfer model in the interface between LB alignment films and the FLC layer, it is regarded that the LB films eded at the high temperature can provide a higher energy barrier than that of imidized at the low temperature, which facilitates the appearance of FLC bistability. In addition, the ultra-thinness of LB films is beneficial for the neutralization and release of the surface charges brought out during the switching process, which guarantees the oblainment of excellent bistable memory capability and the realization of fast response up to micro-seconds in the surface-stabilzed FLC devices.

  • 【文献出处】 化学物理学报 ,CHINESE JOURNAL OF CHEMICAL PHYSICS , 编辑部邮箱 ,2000年01期
  • 【分类号】O633.22
  • 【被引频次】4
  • 【下载频次】122
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