【摘要】 介绍了一维导热方程、边界条件及初始条件 ,推出了有缺陷区和无缺陷区的样品的表面温度 ,计算了含有脱粘区的键合硅片的表面温度差与加热时间、脱粘区厚度等关系 ,并用红外热像仪进行了实验测量更多还原

【Abstract】 One dimensional equation of heat conduction, its initial conditions and boundary conditions were described. The surface temperature difference between the flawed and the unflawed regions was given. The surface temperature difference versus heating time, delamination thickness in bonding silicon wafers containing delamination was calculated. The experiment was carried out by using an infrared thermal imager.更多还原