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多层In0.55Al0.45As/A0.5Ga0.5As量子点的变温光致发光研究

PHOTOLUMINESCENCE STUDY OF MULTILAYER In In0.55Al0.45As/A0.5Ga0.5As QUANTUM DOT AT VARIOUS TEMPERATURE 

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【作者】 陈晔张旺李国华朱作明韩和相汪兆平周伟王占国

【Author】 CHEN Ye ZHANG Wang LI Guo Hua ZHU Zuo Ming HAN He Xiang WANG Zhao Ping (National Laboratory for Superlattices and Microstructures, Institute of Semiconductors. Chinese Academy of Sciences, Beijing 100083, China)ZHOU Wei WANG Zhan Guo(Laborato

【机构】 中国科学院半导体研究所半导体超晶格国家重点实验室!北京100083中国科?

【摘要】 测量了自组织多层In0.55Al0.45As/Al0.5Ga0.5As量子点的变温光致发光谱,同时观察到来自浸润层和量子点的发光,首次直接观察到了浸润层和量子点之间的载流子热转移.分析发光强度随温度的变化发现浸润层发光的热淬灭包括两个过程:低温时浸润层的激子从局域态热激发到扩展态,然后被量子点俘获;而温度较高时则通过势垒层的X能谷淬灭.利用速率方程模拟了激子在浸润层和量子点间的转移过程,计算结果与实验符合得很好

【Abstract】 The photoluminescence of self assembled multilayer In 0.55 Al 0.45 As/Al 0.5 Ga 0.5 As quantum dot (QD) was measured at various temperatures. Strong photoluminescence of wetting layer (WL) and quantum dots were observed at the same time. Furthermore, direct excitons thermal transfer process between the wetting layer and quantum dots was observed. In the study of temperature dependence of PL intensity it was found that the PL peak of wetting layer contains two quenching processes: at low temperature, excitons are thermally activated from localized states to extended two dimensional states and then trapped by QDs; at high temperature excitons quench through the X valley of barriers. Using rate equation excitons thermal transfer and quenching processes were analyzed quantitatively.

【关键词】 量子点光致发光浸润层
【Key words】 quantum dotphotoluminescencewetting layer.
【基金】 国家自然科学基金!(编号 :697760 1 2 );国家攀登计划资助
  • 【文献出处】 红外与毫米波学报 ,JOURNAL OF INFRARED AND MILLIMETER WAVES , 编辑部邮箱 ,2000年01期
  • 【分类号】O472
  • 【被引频次】1
  • 【下载频次】90
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