【摘要】 利用成熟的HgCdTe器件生产工艺制备了HgCdTeHall器件 ,利用Ar+束溅射沉积技术在HgCdTeHall器件表面实现了ZnS介质薄膜的低温生长 ;用低温变磁场Hall测量技术对ZnS薄膜覆盖前后的Hall器件输运特性进行了研究 ,分析了ZnS薄膜的沉积生长对器件中HgCdTe晶体表面、体内载流子的分布、迁移率的影响。实验证明 ,利用文中的Ar+束溅射沉积技术在HgCdTe器件表面进行ZnS介质膜生长不会引起器件HgCdTe晶格的损伤 ,且ZnS与器件界面的固定电荷呈正电荷 ,不会降低n HgCdTe光导型红外探测器器件的最终性能指标。更多还原

【Abstract】 HgCdTe Hall device is made in standard device fabrication process. ZnS film is deposited in low temperature on the surface of the HgCdTe Hall Device using Ar + beam sputtering technology. The influence of the coating of ZnS film on the HgCdTe Hall device on the carriers in HgCdTe crystal is studied through magnetic field dependent transfer measurement. It is proved that the ZnS film deposited in this way on the surface of HgCdTe device will not undermine the HgCdTe crystal, and the fixed charge of the interface (ZnS/device surface) will not degrade the property of n HgCdTe photoconductor detector.更多还原