【摘要】 用能量 50 - 1 1 0 ke V的 N离子在低于 80°C温度下注入 CVD法合成的金刚石薄膜后 ,分别用 X射线光电子谱、红外谱和拉曼谱检测注入后的薄膜中是否形成了 C- N化合物 .结果表明注入后的薄膜中存在有 3种化学键态的 C- N化合物 ,且低能离子注入更有利于 C- N化合物的形成 .由于在注入区内形成了大量的 C- N单键 ,这有利于β- C3N4 的合成 .对 C- N化合物薄膜的场发射特性也做了研究更多还原

【Abstract】 Diamond films were implanted with 50-110 keV N ions to the dosage of 1×10 17 ions/cm 2 at the temperature below 80 °C . The possibility of the formation of C N compounds in diamond films was investigated by means of X ray photoelectron spectroscopy (XPS), X ray diffraction analysis (XRD), Fourier transform infrared absorption spectroscopy (FTIR) and Raman spectroscopy. New evidence has been presented that plenty of C-N single bonds which are necessary for β C 3N 4 formation were formed in the N implanted diamond films. The low energy was found to be suitable for C N compound formation. The XPS analysis indicates that there are three types of chemical states between C and N atoms. FTIR and Raman spectra show that a large number of the C N covalent bonds have been formed. XRD and Raman analysis indicate that the structure of implanted layer is amorphous. Properties of field emission from C N compound film were also studied.更多还原