【摘要】 用文献 [4 ]中的理论和实验结果论证了本文作者在 1987年首先采用新的方法求解 p型半导体在过渡温度范围的霍尔系数极值所得到的一系列新结论 .理论和实验验证结果的一致证明了新的霍尔系数极值是正确的 .作者提出了采用霍尔极值因数来表征不同半导体材料的霍尔特性及测量载流子迁移率之比值的新方法 .更多还原

【Abstract】 We show that the extreme value of the p_type semiconductor Hall coefficient in the transitional temperature regime obtained in our previous paper[2] can be further evidenced on the basis of the theory and experiment given in Ref.[4]. We conclude that the extremum factor of the Hall coefficient is a good measure of the Hall characteristic, and it can be also used to determine the mobility ratio of carriers in semiconductors.更多还原