【摘要】 给出了国内首次 FL ASH ROM器件的中子辐照效应实验研究结果。发现 2 8F2 56和 2 9C2 56器件的14Me V中子辐照效应不同于以往所认为的单粒子效应 ,它只有“0”→“1”错误。错误发生有个中子注量阈值 ,当中子注量小于某一个值时 ,无错误 ;当中子注量达到一定值时 ,开始出现错误。随着中子注量的增加 ,错误数增加 ,直到所有“0”变为“1”。动态监测和静态加电的器件都出现硬错误 ,不能用编程器重新写入数据。错误随读取次数的增加而增加。在相同的中子注量下 ,不加电的器件无错误 ,而加电的器件都出现错误 ,并且出现不确定性错误更多还原

【Abstract】 Experimental results of neutron irradiation effects are given for FLASH ROM. New phenomena are observed. The 14 MeV neutron irradiation effects in 28F256 and 29C256 devices are different from the single event effects. Errors are only “0”→“1”.There is a neutron flux threshold. Errors occur when neutron flux is above the threshold, no error occurs when below the threshold. The errors go up with the increase of the neutron flux until all “0” change to “1” . Hard errors, that new data cannot be written in memory with programmer, occur in devices which are measured during irradiation and irradiated in power on mode. Errors rise with the increase of reading times. Under same neutron flux, there is no error in devices in power off mode, however, errors occur in all devices in power on mode, moreover, undefined errors occur.更多还原