【摘要】 介绍了一种用于 Ga As半导体探测器 ,以场效应管和集成运放为主要器件的低噪声的电荷灵敏前置放大器的设计。设计性能指标达到 :电荷灵敏度 2× 10 12 V/ C,等效噪声电荷 <10 0 (电子 -空穴 ) ,上升时间<10 ns更多还原

【Abstract】 The low noise charge sensitive preamplifier which designed by JFET and integrated circuit operational amplifier for GaAs semiconductor detector is described in this paper. Its properties: charge sensitivity A cq =2×10 12 V/C;equivalent noise charges ENC<100;rise time t r <10 ns.更多还原